MSA-0470 Avago Technologies US Inc., MSA-0470 Datasheet - Page 2

• Manufacturer Part Number: MSA-0470
• Description: AMP MMIC SI BIPOLAR 70-MIL PKG
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of MSA-0470

• Gain: 7.5dB ~ 9.5dB
• Rf Type: ISM
• Current - Supply: 50mA
• Frequency: 0Hz ~ 4GHz
• Noise Figure: 6.5dB
• P1db: 12.5dBm
• Package / Case: 4-SMD (70 mil)
• Test Frequency: 1GHz
• Voltage - Supply: 4.75V ~ 5.75V
• Frequency Range: DC To 4GHz
• Noise Figure Typ: 6.5dB
• Power Dissipation Pd: 650mW
• Supply Current: 70mA
• Supply Voltage Range: 4.75V To 5.75V
• Number Of Channels: 1
• Frequency (max): 4GHz
• Output Power: 12.5@1000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 4.75V
• Single Supply Voltage (typ): 5.25V
• Single Supply Voltage (max): 5.75V
• Package Type: Case 70
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 4
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MSA-0470 Absolute Maximum Ratings
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8.7 mW/°C for T
4. The small spot size of this technique results in a higher, though more accurate determination
Electrical Specifications
2
Note:
1. The recommended operating current range for this device is 30 to 70 mA.
Parameter
Device Current
Power Dissipation
RF Input Power
Junction Temperature
Storage Temperature
Symbol
VSWR
G
∆G
f
NF
P
IP
t
V
dV/dT
3 dB
D
1 dB
d
P
of θ
3
Typical performance as a function of current is on the following page.
P
CASE
jc
= 25°C.
than do alternate methods.
[2,3]
Parameters and Test Conditions: I
Power Gain (|S
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
[1]
C
> 125°C.
, T
A
= 25°C
21
|
2
)
d
= 50 mA, Z
Absolute Maximum
–65 to 200°C
+13 dBm
650 mW
100 mA
O
200°C
= 50 Ω
f = 0.1 GHz
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
[1]
Thermal Resistance
θ
jc
= 115°C/W
mV/°C
Units
dBm
dBm
psec
GHz
dB
dB
dB
V
Min.
4.75
7.5
[2,4]
:
±0.6
1.7:1
2.0:1
Typ.
–8.0
12.5
25.5
5.25
125
8.5
4.0
6.5
Max.
±1.0
5.75
9.5