RMPA0959 Fairchild Semiconductor, RMPA0959 Datasheet - Page 2

IC MOD RF POWER AMP 10PIN 4X4LCC

RMPA0959

Manufacturer Part Number
RMPA0959
Description
IC MOD RF POWER AMP 10PIN 4X4LCC
Manufacturer
Fairchild Semiconductor
Type
Power Amplifierr
Datasheets

Specifications of RMPA0959

Current - Supply
62mA
Frequency
824MHz ~ 849MHz
Gain
25dB ~ 26.5dB
Noise Figure
4dB
Package / Case
11-LCC
Rf Type
Cellular, CDMA, CDMA2000, AMPS, IS-95
Voltage - Supply
3V ~ 4.2V
Number Of Channels
1
Frequency (max)
849MHz
Output Power
28dBm
Power Supply Requirement
Dual
Single Supply Voltage (min)
Not RequiredV
Single Supply Voltage (typ)
Not RequiredV
Single Supply Voltage (max)
Not RequiredV
Package Type
PLCC
Dual Supply Voltage (min)
3V
Dual Supply Voltage (typ)
3.4V
Dual Supply Voltage (max)
4.2V
Operating Temperature Classification
Commercial
Operating Temp Range
-30C to 85C
Pin Count
10
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P1db
-
Test Frequency
-
Lead Free Status / Rohs Status
Compliant
Other names
RMPA0959TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RMPA0959
Manufacturer:
FAI
Quantity:
4 498
Part Number:
RMPA0959-108
Manufacturer:
VISHAY
Quantity:
500
©2004 Fairchild Semiconductor Corporation
Absolute Ratings
Notes:
1: No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.
Electrical Characteristics
Notes:
1. All parameters met at Tc = +25°C, Vcc = +3.4V, Vref = 2.85V and load VSWR ≤ 1.2:1, unless otherwise noted.
2. All phase angles.
3. Guaranteed by design.
Vcc1, Vcc2
Vref
Vmode
Pin
Tstg
CDMA Operation
AMPS Operation
General Characteristics
DC Characteristics
Symbol Parameter
ACPR1
ACPR2
2fo-5fo
Icc(off)
VSWR
Rx No
PAEd
PAEa
Symbol
SSg
Iccq
Iref
Gp
Itot
Gp
NF
Po
Tc
S
f
Operating Frequency
Small-Signal Gain
Power Gain
Linear Output Power
PAE (digital) @ +28 dBm
PAE (digital) @ +16 dBm
PAEd (digital) @ +16 dBm
High Power Total Current
Low Power Total Current
Adjacent Channel Power Ratio
±885 KHz Offset
±1.98 MHz Offset
Power Gain
Power-Added Efficiency (analog)
Input Impedance
Noise Figure
Receive Band Noise Power
Harmonic Suppression
Spurious Outputs
Ruggedness w/ Load Mismatch
Case Operating Temperature
Quiescent Current
Reference Current
Shutdown Leakage Current
Supply Voltages
Reference Voltage
Power Control Voltage
RF Input Power
Storage Temperature
1
2,3
3
Parameter
1
3
Min
824
-30
25
26
28
16
26
2.0:1 2.5:1
26.5
27.5
-134
Typ
475
130
8.5
-55
-57
-60
-70
29
39
20
53
62
<1
25
4
5
Max
10:1
849
-30
-60
85
8
5
dBm/Hz Po ≤ +28 dBm; 869 to 894 MHz
Units
MHz
dBm
dBm
dBc
dBc
dBc
dBc
dBc
dBc
mA
mA
mA
mA
dB
dB
dB
dB
uA
°C
%
%
%
%
-55 to +150
2.6 to 3.5
Ratings
+10
5.0
3.5
Po = 0 dBm
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode = 0V
Vmode ≥ 2.0V
Vmode ≥ 2.0V, Vcc = 1.4 V
Po = +28 dBm, Vmode = 0V
Po = +16 dBm, Vmode = 2.0V
IS-95 A/B Modulation
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode ≥ 2.0V
Po = +28 dBm; Vmode = 0V
Po = +16 dBm; Vmode ≥ 2.0V
Po = +31 dBm
Po = +31 dBm
Po ≤ +28 dBm
Load VSWR ≤ 5.0:1
No permanent damage.
Vmode ≥ 2.0V
Po ≤ +28 dBm
No applied RF signal.
Comments
Units
dBm
°C
V
V
V
RMPA0959 Rev. D

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