SI4713-B30-GMR Silicon Laboratories Inc, SI4713-B30-GMR Datasheet - Page 4
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SI4713-B30-GMR
Manufacturer Part Number
SI4713-B30-GMR
Description
IC TX FM RADIO RPS/RDS 20UQFN
Manufacturer
Silicon Laboratories Inc
Datasheet
1.SI4712-B30-GMR.pdf
(42 pages)
Specifications of SI4713-B30-GMR
Frequency
76MHz ~ 108MHz
Applications
General Purpose
Modulation Or Protocol
FM
Current - Transmitting
18.8mA
Data Interface
PCB, Surface Mount
Antenna Connector
PCB, Surface Mount
Voltage - Supply
2.7 V ~ 5.5 V
Package / Case
20-UQFN, 20-µQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Power - Output
-
Operating Temperature
-
Memory Size
-
Data Rate - Maximum
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4713-B30-GMR
Manufacturer:
SiliconL
Quantity:
2 500
Si4712/13-B30
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
Interface Supply Powerup Rise
Time
Ambient Temperature
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Supply Voltage
Interface Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
2. The Si4712/13 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
3. For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, DIN, GPO1, GPO2/INT, and GPO3.
4. At RF input pin, TXO.
Typical values apply at V
otherwise stated.
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
Parameter
3
3
Parameter
4
DD
= 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
V
Symbol
V
DDRISE
IORISE
V
V
T
DD
1,2
IO
A
Symbol
T
V
T
V
V
I
STG
OP
DD
IN
IO
IN
Rev. 1.1
Test Condition
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
Min
–20
2.7
1.5
10
10
IO
+ 0.3)
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
V
mA
°C
°C
V
V
V
PK
Unit
µs
µs
°C
V
V