STPS12045TV STMicroelectronics, STPS12045TV Datasheet - Page 2

• Manufacturer Part Number: STPS12045TV
• Description: DIODE SCHOTTKY 45V 60A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STPS12045TV

• Voltage - Forward (vf) (max) @ If: 670mV @ 60A
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Current - Average Rectified (io) (per Diode): 60A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 120 A
• Max Surge Current: 900 A
• Configuration: Dual Parallel
• Forward Voltage Drop: 0.91 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Screw
• Capacitance, Junction: 45 pF
• Current, Forward: 120 A
• Current, Reverse: 2 A
• Current, Surge: 900 A
• Package Type: ISOTOP
• Primary Type: Rectifier
• Resistance, Thermal, Junction To Case: 0.55 °C/W
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Voltage, Forward: 0.87 V
• Voltage, Reverse: 45 V
• Repetitive Reverse Voltage Vrrm Max: 45V
• Forward Current If(av): 120A
• Forward Voltage Vf Max: 910mV
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3207-5

STPS12045TV
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously :
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.47 x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
60
55
50
45
40
35
30
25
20
15
10
2/4
Symbol
5
0
Symbol
Tj(diode 1) = P(diode) x R
R
R
0
PF(av)(W)
V
th (j-c)
I
th (c)
R
F
*
*
10
F(AV)
= 0.05
Junction to case
* tp = 380 s, < 2%
Reverse leakage current
Forward voltage drop
20
+ 0.00333 x I
= 0.1
Parameter
30
IF(av) (A)
= 0.2
th
40
(Per diode) + P(diode 2) x R
F
2
(RMS)
50
= 0.5
60
Parameter
=tp/T
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
70
T
= 1
Tests Conditions
tp
80
th(c)
Fig. 2: Average current versus case temperature
( = 0.5) (per diode).
70
60
50
40
30
20
10
0
V
I
I
I
0
F
F
F
IF(av)(A)
R
= 120 A
= 120 A
= 60 A
= V
=tp/T
RRM
Per diode
Total
Coupling
25
T
tp
Rth(j-a)=Rth(j-c)
50
Min.
Rth(j-a)=5°C/W
Tamb(°C)
75
Typ.
0.72
0.52
Value
43
0.55
0.1
1
100
Max.
0.91
0.87
0.67
150
1
125
Unit
Unit
C/W
mA
V
150