APT2X21DC120J Microsemi Power Products Group, APT2X21DC120J Datasheet - Page 2

• Manufacturer Part Number: APT2X21DC120J
• Description: DIODE SIC PAR 1200V 20A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X21DC120J

• Voltage - Forward (vf) (max) @ If: 1.8V @ 20A
• Current - Reverse Leakage @ Vr: 400µA @ 1200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 0ns
• Diode Type: Silicon Carbide Schottky
• Speed: No Recovery Time > 500mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics (per leg)
Thermal and package characteristics (per leg)
Symbol Characteristic
Symbol Characteristic
T
SOT-227 (ISOTOP
Torque
V
R
R
J
I
,T
Wt
V
Q
T
RM
C
ISOL
thJC
thJA
L
F
C
STG
r = 4.0 (.157)
Diode Forward Voltage
Maximum Reverse Leakage Current
Total Capacitive Charge
Total Capacitance
Junction to Case Thermal resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
Package Weight
(2 places)
®
) Package Outline
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
All ratings @ T
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
j
= 25°C unless otherwise specified
www.microsemi.com
Test Conditions
I
V
I
di/dt =1000A/µs
f = 1MHz, V
f = 1MHz, V
3.3 (.129)
3.6 (.143)
F
F
R
= 20A
= 20A, V
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
= 1200V
4.0 (.157)
4.2 (.165)
(2 places)
(4 places)
R
3
2
R
R
= 600V
= 200V
= 400V
T
T
T
T
j
j
j
j
= 25°C
= 175°C
= 25°C
= 175°C
1.95 (.077)
2.14 (.084)
APT2X21DC120J
APT2X20DC120J
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
4
1
Hex Nut M4
*
2500
Min
Min
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
-55
12.6 (.496)
12.8 (.504)
29.2
Typ
Typ
112
192
138
1.6
2.3
64
80
2000
Max
Max
25.2 (0.992)
25.4 (1.000)
175
300
400
0.8
1.5
1.8
3.0
20
°C/W
Unit
Unit
N.m
µA
nC
pF
°C
V
V
g
2 – 3