DSS2X160-01A IXYS, DSS2X160-01A Datasheet - Page 2

• Manufacturer Part Number: DSS2X160-01A
• Description: DIODE SCHOTTKY 100V2X160A SOT227
• Manufacturer: IXYS

Specifications of DSS2X160-01A

• Voltage - Forward (vf) (max) @ If: 980mV @ 160A
• Current - Reverse Leakage @ Vr: 4mA @ 100V
• Current - Average Rectified (io) (per Diode): 160A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 320 A
• Max Surge Current: 1400 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.98 V at 160 A
• Maximum Reverse Leakage Current: 4000 uA
• Maximum Power Dissipation: 410 W
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: Screw
• Vrrm, (v): 100
• Ifavm, D = 0.5, Total, (a): 320
• Ifavm, D = 0.5, Per Diode, (a): 160
• @ Tc, (°c): 95
• Vf, Max, Tvj =125°c, (v): 0.8
• @ If, (a): 160
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.30
• Package Style: SOT-227UI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSS2X16001A

IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
I
Z
I
F(AV)
F
thJC
0.01
K/W
400
100
240
200
160
120
0.1
0.4
A
10
80
40
A
0.001
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
Fig. 1 Max. forward voltage
Fig. 4 Avg. forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
D=0.5
0.08
0.33
0.25
0.17
(Thermal Resistance)
40
drop characteristics
vs. case temperature T
Single Pulse
80
d=0.5
0.01
T
T
150°C
125°C
25°C
C
VJ
V
120
=
F
DC
C
F(AV)
160
V
C
0.1
P
0.001
I
(AV)
R
0.01
180
160
140
120
100
100
0.1
mA
10
80
60
40
20
W
1
0
0
0
Fig. 2 Typ. reverse current I
Fig. 5 Forward power loss characteristics
125°C
T
100°C
75°C
50°C
25°C
VJ
=150°C
20
50
vs. reverse voltage V
40
1
s
100
60
I
F(AV)
t
150
V
R
DSS2x160-01A
80
d =
DC
0.5
0.33
0.25
0.17
0.08
A
V
R
R
100
200
10
I
10000
10000
FSM
C
1000
1000
T
100
100
pF
A
10
0
Fig. 3 Typ. junction capacitance C
Note: All curves are per diode
20
DSS 2x160-01A
versus reverse voltage V
100
40
60
1000
V
t
T
R
P
VJ
80
= 25°C
µs
V
10000
2 - 2
100
T
R