APT2X30DQ120J Microsemi Power Products Group, APT2X30DQ120J Datasheet - Page 3

• Manufacturer Part Number: APT2X30DQ120J
• Description: DIODE DUAL 30A 1200V SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X30DQ120J

• Voltage - Forward (vf) (max) @ If: 3.1V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 300ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT2X30DQ120JMI; APT2X30DQ120JMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
4000
3500
3000
2500
2000
1500
1000
100
500
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
50
0
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
1
-di
T
V
t
V
I
J
rr
RRM
R
F
60A
T
F
T
= 125°C
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
J
J
T
200
, JUNCTION TEMPERATURE (°C)
= 125°C
25
J
V
= 175°C
1
R
, REVERSE VOLTAGE (V)
400
50
2
Q
10
rr
600
75
15A
3
T
800
100
J
= -55°C
t
rr
T
J
1000
Q
4
125
= 25°C
rr
100 200
30A
1200
150
5
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
450
400
350
300
250
200
150
100
50
30
25
20
15
10
45
40
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 800V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
15A
60A
600
600
100
60A
30A
30A
800
800
125
Duty cycle = 0.5
T
1000
J
T
1000
V
150
J
R
= 175°C
= 125°C
= 800V
15A
1200
1200
175