APT2X61DQ100J Microsemi Power Products Group, APT2X61DQ100J Datasheet - Page 2

DIODE DUAL PAR 60A 1000V SOT-227

APT2X61DQ100J

Manufacturer Part Number
APT2X61DQ100J
Description
DIODE DUAL PAR 60A 1000V SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT2X61DQ100J

Voltage - Forward (vf) (max) @ If
2.8V @ 60A
Current - Reverse Leakage @ Vr
100µA @ 1000V
Current - Average Rectified (io) (per Diode)
60A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Reverse Recovery Time (trr)
235ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT2X61DQ100JMI
APT2X61DQ100JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT2X61DQ100J
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
APT2X61DQ100J
Manufacturer:
MICROSEMI/美高森美
Quantity:
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THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
Symbol
V
Torque
I
I
I
Isolation
R
RRM
RRM
RRM
Q
Q
Q
W
t
t
t
t
θJC
rr
rr
rr
rr
rr
rr
rr
T
0.60
0.50
0.40
0.30
0.20
0.10
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage
Package Weight
Maximum Mounting Torque
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
0
10
-5
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
D = 0.9
Dissipated Power
0.7
0.5
0.3
0.1
0.05
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
(Watts)
10
-4
I
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
F
= 1A, di
T
J
(°C)
RECTANGULAR PULSE DURATION (seconds)
0.006
F
0.148
/dt = -100A/µs, V
SINGLE PULSE
10
-3
I
I
I
F
0.0909
F
F
V
V
0.238
= 60A, di
V
= 60A, di
= 60A, di
R
R
R
= 667V, T
= 667V, T
Test Conditions
= 667V, T
R
0.524
= 30V, T
F
F
F
0.174
/dt = -1000A/µs
/dt = -200A/µs
/dt = -200A/µs
T
C
C
10
C
C
= 125°C
= 125°C
-2
(°C)
= 25°C
J
= 25°C
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
Note:
2500
MIN
Peak T J = P DM x Z θJC + T C
MIN
-
-
-
-
-
-
-
-
-
-
Duty Factor D =
10
-1
t 1
2290
4170
TYP
235
445
285
125
1.03
29.2
t 2
TYP
36
13
50
5
t 1
/
t 2
MAX
MAX
.56
1.1
10
-
-
1.0
Amps
Amps
Amps
UNIT
UNIT
°C/W
Volts
lb•in
N•m
nC
nC
nC
ns
ns
ns
oz
g

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