APT2X101D60J Microsemi Power Products Group, APT2X101D60J Datasheet - Page 3

• Manufacturer Part Number: APT2X101D60J
• Description: DIODE DUAL PAR 100A 600V SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APT2X101D60J

• Voltage - Forward (vf) (max) @ If: 1.8V @ 100A
• Current - Reverse Leakage @ Vr: 250µA @ 600V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 180ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT2X101D60JMI; APT2X101D60JMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
1200
1000
3000
2500
2000
1500
1000
300
250
200
150
100
500
800
600
400
200
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
V
J
R
F
t
T
F
rr
T
= 125°C
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
J
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
= 150°C
25
0.5
V
R
T
, REVERSE VOLTAGE (V)
J
I
200A
= 125°C
RRM
400
50
1
50A
10
Q
rr
600
75
1.5
800
100
T
J
T
t
rr
= -55°C
J
Q
1000
2
= 25°C
125
rr
100 200
100A
1200
2.5
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
250
200
150
100
200
180
160
140
120
100
50
50
40
30
20
10
80
60
40
20
0
0
0
0
0
25
-di
-di
T
V
F
J
R
F
/dt, CURRENT RATE OF CHANGE(A/µs)
= 125°C
= 400V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
50A
200A
600
600
100
100A
200A
100A
800
800
125
50A
Duty cycle = 0.5
T
1000
1000
J
T
150
V
J
= 175°C
R
= 125°C
= 400V
1200
1200
175