DHG50X1200NA IXYS, DHG50X1200NA Datasheet

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DHG50X1200NA

Manufacturer Part Number
DHG50X1200NA
Description
DIODE ARRAY 1200V 25A SOT227B
Manufacturer
IXYS
Datasheet

Specifications of DHG50X1200NA

Voltage - Forward (vf) (max) @ If
2.12V @ 25A
Current - Reverse Leakage @ Vr
50µA @ 1200V
Current - Average Rectified (io) (per Diode)
25A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
75ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
50
Ifavm, D = 0.5, Per Diode, (a)
25
@ Tc, (°c)
65
Ifsm, 10 Ms, Tvj=45°c, (a)
200
Vf, Max, Tvj =125°c, (v)
2.09
@ If, (a)
25
Trr, Typ, Tvj =25°c, (ns)
200
Irm , Typ, Tvj =25°c, (a)
23
@ -di/dt, (a/µs)
600
Tvjm, (°c)
150
Rthjc, Max, (k/w)
1.20
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DHG 50 X 1200 NA
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
Features / Advantages:
R
FAV
FSM
RM
rr
F
RRM
F0
VJ
tot
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
thJC
J
2009 IXYS all rights reserved
average forward current
thermal resistance junction to case
junction capacitance
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
Conditions
V
V
I
I
I
I
rectangular
t = 10 ms
I
-di
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
600
1200
1200
25
Data according to IEC 60747and per diode unless otherwise specified
=
25
50
25
50
A;
1000
V;
V
V
A
A
A
A
V
(50 Hz), sine
R
f = 1 MHz
A/µs
=
d =
800
0.5
V
T
T
T
T
T
T
T
T
T
T
T
T =
T
T =
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 70°C
= 150°C
=
= 45°C
=
=
=
DHG 50 X 1200 NA
125
125
25
25
25
25
25
25
● Housing:
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rUL registered E 72873
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
t
Package:
FAV
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
rr
RRM
min.
=
=
=
-55
R a t i n g s
SOT-227B (minibloc)
2x
1200
typ.
tbd
tbd
11
25
75
Backside: Isolated
25
75 ns
max.
1200
2.12
2.70
2.00
2.73
1.17
28.8
1.20
V
A
150
100
180
tentative
50
25
2
20090323
Unit
K/W
m
mA
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A

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DHG50X1200NA Summary of contents

Page 1

... RM t reverse recovery time rr C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...

Page 2

... IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Conditions 1) per pin second minute Part Name Marking on Product DHG50X1200NA Data according to IEC 60747and per diode unless otherwise specified DHG 50 X 1200 NA Ratings min. typ. 0.10 -55 30 1.1 1 ...

Page 3

... Outlines SOT-227B (minibloc Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 IXYS reserves the right to change limits, conditions and dimensions. 2009 IXYS all rights reserved © Data according to IEC 60747and per diode unless otherwise specified DHG 50 X 1200 NA tentative SYM ...

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