DSS2X121-0045B IXYS, DSS2X121-0045B Datasheet - Page 2

• Manufacturer Part Number: DSS2X121-0045B
• Description: DIODE SCHOTTKY 45V 2X120A SOT227
• Manufacturer: IXYS

Specifications of DSS2X121-0045B

• Voltage - Forward (vf) (max) @ If: 620mV @ 120A
• Current - Reverse Leakage @ Vr: 120mA @ 45V
• Current - Average Rectified (io) (per Diode): 120A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 240 A
• Max Surge Current: 1600 A
• Configuration: Dual Parallel
• Forward Voltage Drop: 0.62 V at 120 A
• Maximum Reverse Leakage Current: 120000 uA
• Maximum Power Dissipation: 310 W
• Operating Temperature Range: - 40 C to + 150 C
• Mounting Style: Screw
• Vrrm, (v): 45
• Ifavm, D = 0.5, Total, (a): 240
• Ifavm, D = 0.5, Per Diode, (a): 120
• @ Tc, (°c): 100
• Vf, Max, Tvj =125°c, (v): 0.59
• @ If, (a): 120
• Tvjm, (°c): 150
• Rthjc, Max, (k/w): 0.40
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DSS2X1210045B

Fig. 1 Maximum forward voltage
Fig. 4 Average forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2002 IXYS All rights reserved
I
Z
F
I
thJC
F(AV)
0.01
K/W
300
100
160
120
0.1
A
10
80
40
A
0.001
1
1
0
0.0
0
D=0.5
0.33
0.25
0.17
drop characteristics
versus case temperature T
0.08
0.2
40
0.4
T
150°C
125°C
25°C
VJ
80
d=0.5
=
0.01
0.6
T
C
V
120
F
Single Pulse
0.8
DC
°C
F(AV)
V
C
160
1.0
0.1
P
10000
I
Fig. 2 Typ. value of reverse current I
Fig. 5 Forward power loss
R
1000
(AV)
100
110
100
mA
0.1
W
10
90
80
70
60
50
40
30
20
10
0
1
0
0
T
125°C
100°C
50°C
25°C
75°C
versus reverse voltage V
characteristics
VJ
=150°C
10
40
20
1
s
80
30
I
F(AV)
t
V
120
DSS2x121-0045B
R
40
d =
DC
0.5
0.33
0.25
0.17
0.08
R
V
A
50
10
R
I
10000
FSM
C
1000
Fig. 3 Typ. junction capacitance C
Note: All curves are per diode
T
100
pF
A
0
DSS 2x121-0045B
versus reverse voltage V
10
20
30
V
t
R
T
P
VJ
= 25°C
µs
40
R
2 - 2
V
T