P1Z7AAR700W18 Powerex Inc, P1Z7AAR700W18 Datasheet - Page 4

• Manufacturer Part Number: P1Z7AAR700W18
• Description: DIODE MOD PWR-BRIK DL 1800V 355A
• Manufacturer: Powerex Inc

Specifications of P1Z7AAR700W18

• Current - Average Rectified (io) (per Diode): 355A
• Voltage - Dc Reverse (vr) (max): 1800V (1.8kV)
• Reverse Recovery Time (trr): 15µs
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Chassis Mount
• Package / Case: POW-R-BRIK™ Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (vf) (max) @ If: -

P-4
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
POW-R-BRIK™
Phase Control Modules
345-800 Amperes/400-3000 Volts
Maximum Ratings and Electrical Characteristics
Part Number
Diode/Diode
P1Z7AAR700W_ _
P1Z7ABR700W_ _
P1Z9AAR900W_ _
P1Z9ACR900W_ _
P1Z9ADR900V_ _
Half Control SCR/Rectifier
P2Z7ABB700W_ _
P2Z7ACB700W_ _
P2Z9AAA900W_ _
P2Z9ABA900W_ _
P2Z9ACA900W_ _
Full Control SCR/SCR
P3Z7ABT700W_ _
P3Z7ACT700W_ _
P3Z7AAT800W_ _
P3Z7ABT800W_ _
P3Z7ACT800W_ _
P3Z9AAT900W_ _
P3Z9ABT900W_ _
P3Z9ACT900W_ _
Half Control Rectifier/SCR
P7Z7ABB700W_ _
P7Z7ABC700W_ _
P7Z9AAA900W_ _
P7Z9AAB900W_ _
P7Z9AAC900W_ _
**
*
Applies for zero or negative gate bias.
Higher dv/dt ratings available, consult factory.
With recommended gate drive.
Per JEDEC standard RS-397, 5.2.2.6.
Per JEDEC RS-397, 5.2.2.1.
Bottom side cooled.
Consult recommended mounting procedures.
Designs are available for “Current Source Inverter”
applications, consult factory.
Reflects substantial derating necessary with single
0.08°C/W or 0.10°C/W sink.
Element location indicated by E1 or E2.
Hi-Pot. 60Hz, 1 min. test
3000
2200
3000
1200
V
2200
1600
3000
2000
1600
2200
1600
3000
2200
1400
3000
2000
1600
2200
1600
3000
2000
1600
DRM
600
(V)
E1
/V
3000
2200
3000
1200
RRM
2200
1600
3000
2000
1600
2200
1600
3000
2200
1400
3000
2000
1600
2200
1600
3000
2000
1600
600
(V)
E2
Voltage
3100
2300
3100
1300
2300
1700
3100
2100
1700
2300
1700
3100
2100
1700
2300
1700
3100
2300
1500
3100
2100
1700
700
(V)
E1
V
RSM
3100
2300
3100
1300
2300
1700
3100
2100
1700
2300
1700
3100
2300
1500
3100
2100
1700
2300
1700
3100
2100
1700
700
(V)
E2
dv/dt
(V/ s)
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
300
—
—
—
—
—
Voltage Gate Current, Speed of Element*
V
(V)
—
—
—
—
—
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
GT
Gate
(mA)
150
150
150
150
150
200
200
200
150
150
200
200
200
150
150
200
200
200
I
—
—
—
—
—
GT
di/dt
(A/ s)
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
—
—
—
—
—
I
(mA)
150
150
150
150
150
150
DRM
E1
50
50
30
30
75
75
30
30
35
35
35
75
75
30
30
75
75
/I
RRM
(mA)
150
150
150
150
150
150
Current
E2
50
50
30
30
75
75
30
30
35
35
35
75
75
30
30
75
75
I
TSM
(kA)
16
30
50
10
15
17
25
10
12
15
15
17
25
14
16
16
16
E1
7
9
9
9
9
9
/I
FSM
(kA)
16
30
50
14
16
16
16
10
12
15
15
17
25
10
15
17
25
E2
7
9
9
9
9
9
SCR
( s)
150
150
200
200
200
400
250
150
150
150
400
250
150
150
150
400
250
150
t
—
—
—
—
—
q
Speed
Diode
( s)
15
10
20
15
10
10
20
20
20
10
20
20
20
t
—
—
—
—
—
—
—
—
rr
8
8
V
3000
2500
3000
2500
2500
2500
2500
3000
2500
2500
2500
2500
2500
2500
2500
3000
2500
2500
2500
2500
3000
2500
2500
(V)
RMS
Voltage**
Isolation
(mA)
1.10
0.92
1.70
1.50
1.50
0.92
0.92
1.70
1.50
1.50
0.92
0.92
0.92
0.92
0.92
1.70
1.50
1.50
0.92
0.92
1.70
1.50
1.50
I
RMS
Case
(In.)
Terminals
0.70
0.70
1.00
1.00
1.00
0.70
0.70
1.00
1.00
1.00
0.70
0.70
0.70
0.70
0.70
1.00
1.00
1.00
0.70
0.70
1.00
1.00
1.00
to
Distance
Strike
K
K
(In.)
1.00
1.00
1.15
1.15
1.15
1.00
1.00
1.15
1.15
1.15
1.00
1.00
1.00
1.00
1.00
1.15
1.15
1.15
1.00
1.00
1.15
1.15
1.15
1
2
/A
/A
1
2