IRKD236/12 Vishay, IRKD236/12 Datasheet - Page 2

• Manufacturer Part Number: IRKD236/12
• Description: DIODE STD REC 1200V 230A INTAPAK
• Manufacturer: Vishay

Specifications of IRKD236/12

• Current - Reverse Leakage @ Vr: 20mA @ 1200V
• Current - Average Rectified (io) (per Diode): 230A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Reverse Recovery Time (trr): -
• Voltage - Forward (vf) (max) @ If: -
• Other names: *IRKD236/12; VS-IRKD236/12; VS-IRKD236/12; VSIRKD236/12; VSIRKD236/12

IRK.166, .196, .236 Series
Bulletin I27116 rev. C 03/02
2
Electrical Specifications
Voltage Ratings
Forward Conduction
Blocking
I
I
I
I
I
V
V
r
r
V
Type number
IRK.166
IRK.196
IRK.236
I
V
F(AV)
F(RMS)
FSM
2
2
t1
t2
RRM
t
F (TO)1
F (TO)2
FM
INS
t
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Maximum peak, one-cycle
on-state, non-repetitive
surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value on-state
slope resistance
High level value on-state
slope resistance
Maximum forward voltage drop
Parameter
Maximum peak reverse and
off-state leakage current
RMS isolation voltage
2
2
t for fusing
t for fusing
Voltage
Code
04
08
12
14
16
V
RRM
peak reverse voltage
IRK.166 IRK.196 IRK.236 Units Conditions
, Maximum repetitive V
4000
4200
3350
3500
0.73
0.88
1.26
1.43
165
100
260
798
1.5
80
73
56
52
1200
1400
1600
400
800
V
4750
4980
4000
4200
1130
3500
0.69
0.78
1.38
195
100
305
113
103
1.3
1.2
80
73
20
5500
5765
4630
4850
1516
0.83
1.07
1.46
230
100
360
151
138
107
1.2
0.7
98
RSM
peak reverse voltage
, Maximum non-repetitive
KA
KA
m
mA
°C
A
A
A
V
V
V
2
2
s
s t = 0.1 to 10ms, no voltage reapplied
1300
1500
1700
500
900
V
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
t = 8.3ms reapplied
180° conduction, half sine wave
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% V
t = 8.3ms reapplied
(16.7% x x I
(I >
(16.7% x x I
(I >
I
Av. power = V
T
50Hz, circuit to base, all terminals shorted,
t = 1s
FM
J
= 150
=
x I
x I
x I
F (AV)
F (AV)
o
F(AV)
C
F(AV)
), @ T
F (AV)
), @ T
, T
F(TO)
J
< I < x I
< I < x I
= 25°C, 180°conduction
x I
J
J
RRM
RRM
max.
max.
F(AV)
Initial T
F(AV)
F (AV)
Sine half wave,
150°C
+ r
I
m A
RRM
20
www.irf.com
), @ T
), @ T
f
x (I
J
= T
F(RMS)
J
J
J
max.
max.
max.
)
2