FF1N30HS60DD Fairchild Semiconductor, FF1N30HS60DD Datasheet - Page 4

• Manufacturer Part Number: FF1N30HS60DD
• Description: DIODE STEALTH 600V 30A SOT227
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of FF1N30HS60DD

• Voltage - Forward (vf) (max) @ If: 2.4V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 45ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves (Continued)
Figure 7. Reverse Recovery Softness Factor vs
1000
2.25
1.75
1.25
0.75
Figure 9. Junction Capacitance vs Reverse
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0
200
0.001
0.01
2.0
1.0
0.1
10
I
0.1
F
I
F
-5
= 15A
0.5
0.2
0.1
0.05
0.02
0.01
400
DUTY CYCLE - DESCENDING ORDER
= 60A
SINGLE PULSE
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
600
V
R
, REVERSE VOLTAGE (V)
Figure 11. Normalized Maximum Transient Thermal Impedance
I
F
Voltage
dI
= 30A
1
800
F
10
/dt
-4
1000
V
R
= 390V, T
1200
10
10
J
1400
= 125
-3
t, RECTANGULAR PULSE DURATION (s)
o
C
1600
100
10
Figure 8. Reverse Recovered Charge vs dI
-2
1200
1000
800
600
400
200
35
30
25
20
15
10
5
0
200
105
Figure 10. DC Current Derating Curve
V
R
= 390V, T
400
115
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
10
J
-1
= 125
600
125
T
NOTES:
DUTY FACTOR: D = t
PEAK T
C
, CASE TEMPERATURE
o
C
800
135
J
= P
DM
1000
145
x Z
10
P
I
I
I
DM
0
F
F
F
JA
1
= 60A
= 30A
= 15A
/t
x R
2
1200
155
t
JA
1
FFH1N30HS60DD RevA
t
2
+ T
1400
165
A
F
10
/dt
1600
175
1