STGE200NB60S STMicroelectronics, STGE200NB60S Datasheet - Page 11

• Manufacturer Part Number: STGE200NB60S
• Description: IGBT N-CHAN 150A 600V ISOTOP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGE200NB60S

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 1.56nF @ 25V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Transistor Type: IGBT
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 600W
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 4
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.2 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 200 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Screw
• Collector Emitter Voltage V(br)ceo: 600V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6731-5; STGE200NB60S

STGE200NB60S
DIM.
G
M
O
A
B
C
D
E
F
H
K
N
J
L
N
25.15
MIN.
11.8
1.95
0.75
12.6
31.5
14.9
30.1
37.8
8.9
4.1
7.8
4
4
O
J
G
K
L
M
ISOTOP MECHANICAL DATA
TYP.
mm
MAX.
12.2
2.05
0.85
12.8
25.5
31.7
15.1
30.3
38.2
9.1
4.3
8.2
0.466
0.350
0.076
0.029
0.496
0.990
1.240
0.157
0.161
0.586
1.185
1.488
0.157
0.307
MIN.
B
A
C
Package mechanical data
TYP.
inch
MAX.
0.480
0.358
0.080
0.033
0.503
1.003
1.248
0.169
0.594
1.193
1.503
0.322
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