APT75GN120JDQ3 Microsemi Power Products Group, APT75GN120JDQ3 Datasheet - Page 2

• Manufacturer Part Number: APT75GN120JDQ3
• Description: IGBT 1200V 124A 379W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GN120JDQ3

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 124A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 4.8nF @ 25V
• Power - Max: 379W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GN120JDQ3MI; APT75GN120JDQ3MI

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
Symbol
Symbol
V
SSOA
V
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
t
t
Isolation
C
E
E
E
E
R
R
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
Q
W
on1
on2
off
GEP
G
on1
on2
on1
on2
oes
t
t
t
t
θ
θ
res
ies
off
off
ge
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage
ces
includes both IGBT and FRED leakages
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
3
6
4
4
66
4
G(int)
55
5
nor gate driver impedance. (MIC4452)
T
15V, L = 100µH,V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
R
V
R
V
T
V
V
V
f = 1 MHz
J
CE
I
CC
I
CC
I
G
J
G
GE
GE
GE
C
C
C
= +125°C
= +25°C
= 1.0Ω
= 1.0Ω
= 75A
= 75A
= 75A
= 600V
G
= 800V
= 800V
= 15V
= 15V
= 15V
= 4.3Ω
CE
CE
= 25V
7
7
= 1200V
7
, V
GE
=
2500
MIN
225
MIN
13000
11400
4800
8045
9620
7640
8620
TYP
275
210
425
245
620
110
725
200
29.2
TYP
9.0
30
60
41
60
41
MAX
MAX
.33
.56
UNIT
UNIT
°C/W
Volts
nC
pF
µ
µ
gm
ns
ns
V
A
J
J