APT60GT60JR Microsemi Power Products Group, APT60GT60JR Datasheet - Page 4

• Manufacturer Part Number: APT60GT60JR
• Description: IGBT 600V 93A 378W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT60GT60JR

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 93A
• Current - Collector Cutoff (max): 80µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 25V
• Power - Max: 378W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GT60JRMI; APT60GT60JRMI

Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 8, Typical V
Figure 10, Breakdown Voltage vs Junction Temperature
120
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
0.9
0.8
0.7
20
10
10
1
1
1
-50 -25
-50
-50 -25
0.1
V
CC
V
R
GE
T
-25
T
= 0.66 V
T
G
J
J
J
= +15V
= 10
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
CE
0
CES
0
0
(SAT) Voltage vs Junction Temperature
25
25
25
0.5 I
0.5 I
50
50
50
I
I
I
I
C1
C2
C1
C2
C2
C2
75
75
75
1.0
100 125 150
100 125 150
100 125 150
Figure 14,Typical Load Current vs Frequency
F, FREQUENCY (KHz)
10
Figure 11, Typical Switching Energy Losses vs Gate Resistance
Figure 13, Typical Switching Energy Losses vs Collector Current
Figure 9, Maximum Collector Current vs Case Temperature
100
8.0
6.0
4.0
2.0
2.5
2.0
1.5
1.0
0.5
90
80
70
60
50
40
30
20
10
0
0
0
25
0
0
V
V
CC
CC
I
T
C
V
V
T
R
J
GE
GE
J
, COLLECTOR CURRENT (AMPERES)
I
= 0.66 V
= 0.66 V
C
= +125°C
G
= +25°C
R
10
= I
= 10
= +15V
= +15V
T
G
20
C
50
C2
, GATE RESISTANCE (OHMS)
, CASE TEMPERATURE (°C)
CES
CES
100
20
40
75
E
E
30
I
off
on
LOAD
Power dissapation = 140W
Gate drive as specified
100
60
E
Duty Cycle = 50%
E
= I
T
off
on
T
sink
40
J
RMS
For Both:
= +125°C
= +90°C
of fundamental
125
80
50
APT60GT60JR
1000
150
100
60