APT100GT120JRDL Microsemi Power Products Group, APT100GT120JRDL Datasheet - Page 6
APT100GT120JRDL
Manufacturer Part Number
APT100GT120JRDL
Description
IGBT 1200V 123A 570W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT100GT120JRDL.pdf
(9 pages)
Specifications of APT100GT120JRDL
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 100A
Current - Collector (ic) (max)
123A
Current - Collector Cutoff (max)
300µA
Input Capacitance (cies) @ Vce
6.7nF @ 25V
Power - Max
570W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GT120JRDLMI
APT100GT120JRDLMI
APT100GT120JRDLMI
Figure 23, Turn-off Switching Waveforms and Defi nitions
90%
Figure 21, Inductive Switching Test Circuit
V
CC
t
Switching Energy
d(off)
90%
I
10%
C
T
t
f
J
D.U.T.
Gate Voltage
= 125°C
V
CE
APT2X31DL120
Collector Current
A
0
a -226ns
∆1.15μs
b 928ns
Collector Voltage
∆97.34V
0.000V
97.34V
Switching Energy
t
Figure 22, Turn-on Switching Waveforms and Defi nitions
d(on)
10%
5%
t
r
10%
90%
5%
Gate Voltage
APT100GT120JRDL(G)
T
J
a -46.0ns
∆468ns
b 422ns
Collector Current
= 125°C
Collector Voltage
∆746.3V
34.13V
780.4V