APTGL180A120T3AG Microsemi Power Products Group, APTGL180A120T3AG Datasheet - Page 4

• Manufacturer Part Number: APTGL180A120T3AG
• Description: IGBT ARRAY 1200V 230A 940W SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL180A120T3AG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 150A
• Current - Collector (ic) (max): 230A
• Current - Collector Cutoff (max): 300µA
• Input Capacitance (cies) @ Vce: 9.3nF @ 25V
• Power - Max: 940W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGL180A120T3AGMP; APTGL180A120T3AGMP

Typical Performance Curve
300
250
200
150
100
37.5
22.5
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
300
250
200
150
100
Switching Energy Losses vs Gate Resistance
50
50
7.5
0.1
45
30
15
0
0.00001
0
0
0
5
0
0
V
Output Characteristics (V
T
V
I
0.3
0.1
6
CE
C
J
0.05
0.9
0.7
0.5
GE
T
= 150°C
= 150A
Transfert Characteristics
J
= 600V
=150°C
=15V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
1
5
8
0.0001
T
J
=25°C
V
V
GE
CE
10
9
2
(V)
(V)
T
10
J
=25°C
T
GE
11
15
J
=150°C
3
=15V)
rectangular Pulse Duration (Seconds)
0.001
Eoff
Eon
12
20
13
4
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Single Pulse
IGBT
0.01
APTGL180A120T3AG
300
250
200
150
100
350
300
250
200
150
100
40
30
20
10
50
50
0
0
0
0
0
0
V
V
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
T
= 150°C
V
T
R
0.1
= 3.Ω
J
J
= 600V
= 15V
GE
G
=150°C
50
=3Ω
= 150°C
=15V
300
Output Characteristics
1
100
I
V
V
V
C
150
600
GE
CE
CE
(A)
2
=19V
1
(V)
(V)
200
900
3
V
250
GE
V
Eon
GE
=15V
=9V
Eoff
1200
10
300
4
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