APTGF300A120D3G Microsemi Power Products Group, APTGF300A120D3G Datasheet - Page 4

• Manufacturer Part Number: APTGF300A120D3G
• Description: IGBT MODULE NPT PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF300A120D3G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 19nF @ 25V
• Power - Max: 2100W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF300A120D3GMP

Typical Performance Curve
*
600
450
300
150
600
450
300
150
120
100
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
80
60
40
20
0
0
0.00001
0
0
0
5
0
V
V
I
T
C
Output Characteristics (V
J
CE
GE
0.05
0.5
= 300A
0.3
0.1
0.9
= 125°C
0.7
6
= 600V
=15V
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
7
2
0.0001
8
V
T
V
T
CE
J
GE
=125°C
J
10
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
=25°C
4
10
GE
15
=15V)
rectangular Pulse Duration (Seconds)
0.001
Eoff
5
11
Eon
Err
Single Pulse
20
12
6
www.microsemi.com
IGBT
0.01
750
600
450
300
150
80
60
40
20
600
450
300
150
APTGF300A120D3G
0
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
J
GE
G
J
= 125°C
=125°C
= 3.3 Ω
=3.3 Ω
0.1
= 125°C
= 600V
= 15V
=15V
300
1
150
Output Characteristics
2
600
I
V
300
C
CE
V
V
(A)
GE
3
CE
(V)
=20V
900
1
(V)
4
450
1200
V
V
Eon
GE
V
Eoff
GE
5
GE
=15V
Err
=9V
=12V
1500
600
10
6
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