APTGT600U170D4G Microsemi Power Products Group, APTGT600U170D4G Datasheet
APTGT600U170D4G
Specifications of APTGT600U170D4G
Available stocks
Related parts for APTGT600U170D4G
APTGT600U170D4G Summary of contents
Page 1
... CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operation Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APTGT600U170D4G ® Application • Welding converters 1 • Switched Mode Power Supplies • Uninterruptible Power Supplies • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current forward current F V Diode Forward Voltage F E Reverse Recovery Energy r t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGT600U170D4G = 25°C unless otherwise specified j Test Conditions 1700V 15V T = 25° 600A T = 125°C C ...
Page 3
... ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight D4 Package outline (dimensions in mm) APTGT600U170D4G IGBT Diode M4 M6 APT website – http://www.advancedpower.com Min Typ Max Unit 0.044 °C/W 0.065 3500 V -40 150 ° ...
Page 4
... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.05 0.9 0.04 0.7 0.03 0.5 0.02 0.3 0.01 0.1 0.05 0 0.00001 0.0001 APTGT600U170D4G =15V) GE 1200 1000 800 T =125°C J 600 400 200 (V) Energy losses vs Collector Current 500 V =25°C ...
Page 5
... APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT600U170D4G 1200 V ...