CPV364M4KPBF Vishay, CPV364M4KPBF Datasheet
CPV364M4KPBF
Specifications of CPV364M4KPBF
CPV364M4K
CPV364M4K
VS-CPV364M4K
VS-CPV364M4K
VS-CPV364M4KPBF
VS-CPV364M4KPBF
VSCPV364M4K
VSCPV364M4K
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Related parts for CPV364M4KPBF
CPV364M4KPBF Summary of contents
Page 1
IGBT SIP MODULE • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125° 15V GE • Fully isolated printed circuit board mount package • Switching-loss rating includes ...
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CPV364M4K Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage ––– ...
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Fig Typical Load Current vs. Frequency 100 ° 150 ° 20µs PULSE WIDTH ...
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CPV364M4K ase Te m peratu re (° Fig Maximum Collector Current vs. Case Temperature ...
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ies res gc 2500 oes ce 2000 C ies 1500 1000 500 C oes C res ...
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CPV364M4K 4 Ohm 150 C ° 480V 15V GE 3.0 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical Switching ...
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I = 30A 100 di /dt - (A/µs) f Fig Typical Reverse Recovery vs. di 800 ° ...
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CPV364M4K 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode ATE VO LTA . ...
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F 100 ATE D.U. 480V CPV364M4K DE VICE UNDE CURR ...
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CPV364M4K Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE Pulse width 80µs; duty factor Pulse width 5.0µs, single shot. 3.91 ( .154) 2X 21.97 ...