APT50GT120JU2 Microsemi Power Products Group, APT50GT120JU2 Datasheet - Page 4
APT50GT120JU2
Manufacturer Part Number
APT50GT120JU2
Description
IGBT 1200V 75A 347W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT50GT120JU2.pdf
(7 pages)
Specifications of APT50GT120JU2
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
347W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT50GT120JU2
Manufacturer:
APT
Quantity:
15 500
100
100
12
10
0.35
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
8
6
4
2
0
0.4
0.3
0.2
0.1
0
0
0.00001
0
5
0
5
V
T
V
CE
I
J
GE
C
= 125°C
Output Characteristics (V
= 50A
= 600V
0.05
6
=15V
0.7
0.3
0.1
0.9
0.5
Transfert Characteristics
10
Gate Resistance (ohms)
1
T
7
J
=25°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
15
0.0001
8
V
V
CE
GE
2
(V)
T
(V)
J
9
20
=25°C
T
10
GE
J
=125°C
3
T
25
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
Eon
11
www.microsemi.com
Eoff
Single Pulse
30
12
4
IGBT
0.01
120
100
100
20
16
12
75
50
25
80
60
40
20
8
4
0
0
0
0
0
0
V
T
V
T
R
Energy losses vs Collector Current
V
R
CE
J
T
GE
J
G
0.1
APT50GT120JU2
GE
G
=125°C
= 125°C
J
=18 Ω
Reverse Safe Operating Area
= 18 Ω
=15V
= 600V
= 125°C
= 15V
400
25
1
Output Characteristics
V
GE
I
C
V
=17V
800
V
50
CE
(A)
CE
2
(V)
1
(V)
1200
V
75
GE
3
V
=15V
V
Eon
GE
GE
Eoff
=13V
=9V
1600
10
100
4
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