APTGT30A60T1G Microsemi Power Products Group, APTGT30A60T1G Datasheet - Page 5
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APTGT30A60T1G
Manufacturer Part Number
APTGT30A60T1G
Description
IGBT MODULE TRENCH PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT30A60T1G.pdf
(5 pages)
Specifications of APTGT30A60T1G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 25V
Power - Max
90W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
2.5
1.5
0.5
120
100
0.00001
80
60
40
20
3
2
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
ZVS
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
Hard
10
ZCS
0.0001
I
C
20
(A)
V
D=50%
R
T
T
J
c
30
CE
G
=150°C
=85°C
=10Ω
Rectangular Pulse Duration in Seconds
=300V
0.001
www.microsemi.com
Single Pulse
Diode
40
0.01
60
50
40
30
20
10
0
0
APTGT30A60T1G
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
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