APT50GP60JDQ2 Microsemi Power Products Group, APT50GP60JDQ2 Datasheet - Page 6

• Manufacturer Part Number: APT50GP60JDQ2
• Description: IGBT 600V 100A 329W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT50GP60JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 525µA
• Input Capacitance (cies) @ Vce: 5.7nF @ 25V
• Power - Max: 329W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
Switching Energy
90%
t
d(off)
90%
I
C
t
10%
f
D.U.T.
V
CE
APT30DQ60
Collector Voltage
A
0
Collector Current
Gate Voltage
T
T
J
= 125 °C
Figure 22, Turn-on Switching Waveforms and Definitions
Gate Voltage
10%
5%
t
r
10%
t
d(on)
90%
Switching Energy
5 %
Collector Current
Collector Voltage
T
J
= 125 °C