APTGT75SK60T1G Microsemi Power Products Group, APTGT75SK60T1G Datasheet

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75SK60T1G ® Application 11 • AC and DC motor control • Switched Mode Power Supplies Features • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75SK60T1G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 75A T = 150°C C ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGT75SK60T1G Min Typ Max IGBT 0.60 Diode 0.98 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...

Page 4

... J T =25°C J 1 =25° =25° (V) GE Eoff Eon IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT75SK60T1G Output Characteristics 150 V =19V T = 150° 125 V =13V 100 GE V =15V = 0.5 1 1 (V) CE Energy losses vs Collector Current 300V CE Eoff ...

Page 5

... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =4.7Ω =150° =85°C c ZCS 60 80 100 I (A) C Diode Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT75SK60T1G Forward Characteristic of diode 150 125 100 75 T =125° =150° =25° 0.4 0.8 1.2 1 (V) F ...