APTGF50A60T1G Microsemi Power Products Group, APTGF50A60T1G Datasheet - Page 4
APTGF50A60T1G
Manufacturer Part Number
APTGF50A60T1G
Description
IGBT MODULE NPT PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50A60T1G.pdf
(6 pages)
Specifications of APTGF50A60T1G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
150
125
100
150
100
75
50
25
50
0
0
8
7
6
5
4
3
2
1
0
1.20
1.10
1.00
0.90
0.80
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
25
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
8
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
50
10
4
T
J
=125°C
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
75
= 25°C
12
6
GE
7
=15V)
3
100
T
T
14
J
8
=25°C
J
Ic=100A
=125°C
Ic=25A
Ic=50A
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9
125
10
16
4
150
100
70
60
50
40
30
20
10
18
16
14
12
10
3.5
2.5
1.5
0.5
50
0
8
6
4
2
0
0
4
3
2
1
0
25
0
25
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
APTGF50A60T1G
250µs Pulse Test
< 0.5% Duty cycle
I
T
V
C
J
Output Characteristics (V
25
CE
= 50A
= 25°C
T
, Collector to Emitter Voltage (V)
J
50
, Junction Temperature (°C)
T
C
50
, Case Temperature (°C)
50
1
Gate Charge (nC)
V
Gate Charge
75
75
CE
T
=300V
J
=25°C
100 125 150 175 200
75
V
2
CE
250µs Pulse Test
< 0.5% Duty cycle
V
=120V
100
GE
= 15V
GE
T
100
J
=125°C
=10V)
3
Ic=100A
125
V
Ic=50A
Ic=25A
CE
=480V
125
150
4
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