APT75GT120JU3 Microsemi Power Products Group, APT75GT120JU3 Datasheet - Page 4
APT75GT120JU3
Manufacturer Part Number
APT75GT120JU3
Description
IGBT 1200V 100A 416W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT75GT120JU3.pdf
(7 pages)
Specifications of APT75GT120JU3
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
5.34nF @ 25V
Power - Max
416W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT75GT120JU3
Manufacturer:
APT
Quantity:
15 500
150
125
100
150
125
100
16
14
12
10
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
8
6
4
0.3
0.2
0.1
0
0.00001
0
0
0
0
5
V
V
I
T
C
Output Characteristics (V
J
CE
GE
= 75A
= 125°C
= 600V
4
=15V
0.05
6
0.9
0.7
0.3
0.1
0.5
Transfert Characteristics
Gate Resistance (ohms)
8
1
T
7
J
=25°C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
12
0.0001
V
8
V
CE
GE
16
2
(V)
T
(V)
J
9
=25°C
20
GE
Eon
T
10
=15V)
J
24
=125°C
3
T
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
www.microsemi.com
11
28
Eoff
Single Pulse
32
12
4
IGBT
0.01
200
175
150
125
100
150
125
100
17.5
12.5
75
50
25
75
50
25
7.5
2.5
0
0
20
15
10
5
0
0
0
0
V
T
R
Energy losses vs Collector Current
APT75GT120JU3
V
J
T
T
GE
G
0.1
V
R
=125°C
J
CE
=4.7Ω
J
Reverse Safe Operating Area
GE
G
=15V
= 125°C
= 125°C
= 4.7Ω
25
= 600V
= 15V
400
1
Output Characteristics
50
V
GE
V
=17V
I
800
C
V
CE
75
CE
(A)
2
(V)
1
(A)
100
1200
V
GE
3
V
=15V
V
125
GE
GE
Eoff
Eon
=13V
=9V
1600
10
150
4
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