APTGT100SK60T1G Microsemi Power Products Group, APTGT100SK60T1G Datasheet

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APTGT100SK60T1G

Manufacturer Part Number
APTGT100SK60T1G
Description
IGBT 600V 150A 340W SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT100SK60T1G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
G 1
E1
0/VBU S SENSE
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
E1
G1
VBUS
Power Module
Buck chopper
0/VBU S
Q1
Parameter
0/VBUS
0/VBUS
0/VBUS
SENSE
SENSE
VBUS
OUT
NT C2
NT C1
NTC2
NTC1
OUT
OUT
www.microsemi.com
®
T
T
T
T
T
C
C
C
C
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
200A @ 550V
APTGT100SK60TG
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
600
150
100
200
±20
340
-
-
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
= 100A @ Tc = 80°C
= 600V
Unit
W
V
A
V
®
Technology
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APTGT100SK60T1G Summary of contents

Page 1

Buck chopper Trench + Field Stop IGBT Power Module VBUS 0/VBU S SENSE 0/VBU S 0/VBUS SENSE VBUS 0/VBUS E1 0/VBUS SENSE G1 Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I ...

Page 2

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter Saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

Page 3

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   Thermal and package characteristics Symbol Characteristic ...

Page 4

Typical Performance Curve Output Characteristics (V 200 T =25°C J 175 150 T =125°C J 125 100 =25° 0.5 1 1.5 V (V) CE Transfert Characteristics 200 175 T =25°C J 150 125 ...

Page 5

Operating Frequency vs Collector Current 120 100 ZCS 80 ZVS 60 40 Hard 20 switching (A) C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.9 0.7 0.6 0.7 0.5 ...

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