APTGT20H60T1G Microsemi Power Products Group, APTGT20H60T1G Datasheet
APTGT20H60T1G
Specifications of APTGT20H60T1G
Related parts for APTGT20H60T1G
APTGT20H60T1G Summary of contents
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... Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Parameter www.microsemi.com APTGT20H60T1G V = 600V CES I = 20A @ Tc = 80°C C ® Technology - Low voltage drop - ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT20H60T1G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 20A T = 150°C C ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGT20H60T1G Min Typ Max IGBT 2.4 Diode 3.25 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... GE T =150° =25°C J 1 =25° =25° (V) GE Eon Eoff IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT20H60T1G Output Characteristics 40 V =19V T = 150° =13V =15V = 0.5 1 1 (V) CE Energy losses vs Collector Current 1. 300V CE V ...
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... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =12Ω =150° =85° (A) C Diode Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT20H60T1G Forward Characteristic of diode =125° =150° =25° 0.4 0.8 1.2 1 ...