APTGT30DA170T1G Microsemi Power Products Group, APTGT30DA170T1G Datasheet - Page 5
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APTGT30DA170T1G
Manufacturer Part Number
APTGT30DA170T1G
Description
IGBT 1700V 45A 210W SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT30DA170T1G.pdf
(5 pages)
Specifications of APTGT30DA170T1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 30A
Current - Collector (ic) (max)
45A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.5nF @ 25V
Power - Max
210W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
45
40
35
30
25
20
15
10
0.00001
5
0
0
0
Operating Frequency vs Collector Current
0.05
0.9
0.7
0.5
0.1
0.3
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
ZCS
20
0.0001
I
C
switching
(A)
30
hard
40
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=18 Ω
=900V
0.001
50
rectangular Pulse Duration (Seconds)
Single Pulse
www.microsemi.com
60
Diode
0.01
APTGT30DA170T1G
100
80
60
40
20
0
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
1.5
F
T
J
(V)
=25°C
1
2
T
J
=125°C
2.5
10
3
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