APT80GP60JDQ3 Microsemi Power Products Group, APT80GP60JDQ3 Datasheet - Page 3

• Manufacturer Part Number: APT80GP60JDQ3
• Description: IGBT 600V 151A 462W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT80GP60JDQ3

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 80A
• Current - Collector (ic) (max): 151A
• Current - Collector Cutoff (max): 1.25mA
• Input Capacitance (cies) @ Vce: 9.84nF @ 25V
• Power - Max: 462W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT80GP60JDQ3; APT80GP60JDQ3MI

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
120
100
500
400
300
200
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
6
CE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
1
GE
250µs PULSE
T
-25
J
0.5
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
8
T
J
T
T
T
= -55°C
J
J
J
0
= 125°C
3
= 25°C
= 125°C
1.0
10
4
25
T
T
J
J
1.5
= 25°C
= -55°C
5
50
12
6
2.0
7
75
14
8
2.5
J
100 125
= 25°C)
9
3.0
16
10
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
120
100
200
180
160
140
120
100
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 80A
-25
-25
T
0.5
V
50
T
J
GE
T
= 125°C
C
J
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
T
0
J
0
GATE CHARGE (nC)
= 25°C
100
1.0
25
T
J
25
= -55°C
150
1.5
50
50
75 100 125 150
200
2.0
75
V
CE
= 480V
250
2.5
J
100
= 125°C)
300
125
3.0