APT150GN120J Microsemi Power Products Group, APT150GN120J Datasheet - Page 4

• Manufacturer Part Number: APT150GN120J
• Description: IGBT 1200V 215A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT150GN120J

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 215A
• Current - Collector Cutoff (max): 100µA
• Input Capacitance (cies) @ Vce: 9.5nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT150GN120JMI; APT150GN120JMI

120,000
100,000
200,000
160,000
120,000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
80,000
60,000
40,000
20,000
80,000
40,000
FIGURE 13, Turn-On Energy Loss vs Collector Current
400
350
300
250
200
150
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
60
50
40
30
20
10
50
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 1.0Ω
= 1.0Ω
= 800V
= +15V
= 800V
50
=
T
50
50
R
J
1.0Ω, L
G
V
=
, GATE RESISTANCE (OHMS)
GE
,
25 or 125°C,V
or 125°C
5
100
100
100
= 15V
=
100
150
150
150
µ
H, V
10
GE
CE
200
200
200
=
=
15V
800V
250
250
250
15
300
300
300
350
350
350
20
FIGURE 16, Switching Energy Losses vs Junction Temperature
120,000
100,000
50,000
40,000
30,000
20,000
10,000
80,000
60,000
40,000
20,000
FIGURE 14, Turn Off Energy Loss vs Collector Current
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
800
600
400
200
250
200
150
100
FIGURE 12, Current Fall Time vs Collector Current
50
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
R
V
V
R
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
G
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
= 1.0Ω
=
=
T
= 800V
= +15V
V
=
50
50
50
J
1.0Ω, L
1.0Ω
GE
, JUNCTION TEMPERATURE (°C)
800V
25
=15V,T
100
100
100
=
100
J
=125°C
50
150
µ
150
150
H, V
T
V
CE
J
GE
=
200
200
200
=
=15V,T
125°C, V
75
800V
250
250
250
J
=25°C
GE
100
=
300
300
300
15V
350
350
350
125