APT40GF120JRDQ2 Microsemi Power Products Group, APT40GF120JRDQ2 Datasheet - Page 5

• Manufacturer Part Number: APT40GF120JRDQ2
• Description: IGBT 1200V 77A 347W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT40GF120JRDQ2

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 40A
• Current - Collector (ic) (max): 77A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 3.46nF @ 25V
• Power - Max: 347W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Power
Figure 17, Capacitance vs Collector-To-Emitter Voltage
6,000
1,000
(Watts)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.05
T
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
J
(°C)
0.0158
20
0.120
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
EXT
are the external thermal
10
-4
30
0.319
0.241
T
C
(°C)
40
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
ies
oes
res
50
10
SINGLE PULSE
-3
Figure 20, Operating Frequency vs Collector Current
80
10
5
1
10
T
T
D = 50 %
V
R
10
J
C
CE
G
= 125
= 75
= 1.0Ω
160
140
120
100
-2
= 800V
Figure 18,Minimim Switching Safe Operating Area
80
60
40
20
20
0
°
°
I
C
C
C
0
V
, COLLECTOR CURRENT (A)
CE
30
200
, COLLECTOR TO EMITTER VOLTAGE
40
400
Note:
50
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
-1
60
800
t 1
t 2
70
1000 1200 1400
APT40GF120JRDQ2
t 1
80
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f