APTGT50DSK60T3G Microsemi Power Products Group, APTGT50DSK60T3G Datasheet - Page 5
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APTGT50DSK60T3G
Manufacturer Part Number
APTGT50DSK60T3G
Description
IGBT MOD TRENCH DL BUCK CHOP SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50DSK60T3G.pdf
(5 pages)
Specifications of APTGT50DSK60T3G
Igbt Type
Trench and Field Stop
Configuration
Dual Buck Chopper
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 50A
Current - Collector (ic) (max)
80A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.15nF @ 25V
Power - Max
176W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
120
100
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.1
0.9
0.7
switching
0.05
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
20
0.0001
ZCS
I
C
40
(A)
V
D=50%
R
T
T
60
CE
G
J
c
=150°C
=85°C
=8.2Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
Single Pulse
www.microsemi.com
Diode
80
0.01
APTGT50DSK60T3G
100
80
60
40
20
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5