APTGT100A60T1G Microsemi Power Products Group, APTGT100A60T1G Datasheet
APTGT100A60T1G
Specifications of APTGT100A60T1G
Related parts for APTGT100A60T1G
APTGT100A60T1G Summary of contents
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... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGT100A60T1G V = 600V CES I = 100A 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control ® Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT100A60T1G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150°C C ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGT100A60T1G Min Typ Max IGBT 0.44 Diode 0.77 2500 -40 175 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... J T =25°C J 1 =25° =25° (V) GE Eoff Eon IGBT Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT100A60T1G Output Characteristics 200 V =19V T = 150° 175 150 V =13V GE 125 V =15V 100 = 0.5 1 1 (V) CE Energy losses vs Collector Current 7 V ...
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... U.S and Foreign patents pending. All Rights Reserved. V =300V CE D=50% R =3.3Ω =150° =85° 100 125 150 I (A) C Single Pulse 0.001 0.01 Rectangular Pulse Duration in Seconds www.microsemi.com APTGT100A60T1G Forward Characteristic of diode 200 175 150 125 100 T =125° =150° =25° 0.4 0.8 1.2 1.6 2 ...