APTGT50SK170T1G Microsemi Power Products Group, APTGT50SK170T1G Datasheet - Page 4

• Manufacturer Part Number: APTGT50SK170T1G
• Description: IGBT 1700V 75A 312W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50SK170T1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
100
100
0.45
0.35
0.25
0.15
0.05
50
40
30
20
10
80
60
40
20
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.4
0.3
0.2
0.1
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
T
= 50A
Output Characteristics (V
= 125°C
10
0.5
J
6
= 900V
=125°C
=15V
0.05
0.5
0.7
0.3
0.9
0.1
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
1.5
30
8
0.0001
V
T
V
CE
J
GE
40
=25°C
2
9
(V)
(V)
T
J
=25°C
2.5
50
10
T
GE
60
J
11
3
=125°C
T
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
3.5
70
12
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Eon
Eoff
Er
Single Pulse
80
13
4
IGBT
0.01
APTGT50SK170T1G
125
100
50
40
30
20
10
75
50
25
100
0
0
80
60
40
20
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
J
GE
T
G
= 125°C
=125°C
= 10Ω
0.1
=10Ω
J
= 900V
= 15V
=15V
= 125°C
400
20
1
Output Characteristics
800
40
V
I
2
GE
C
V
(A)
=20V
CE
V
CE
1200
(V)
1
60
(V)
V
3
GE
=15V
1600
V
80
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
100
5
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