APTGT50DDA120T3G Microsemi Power Products Group, APTGT50DDA120T3G Datasheet - Page 5

• Manufacturer Part Number: APTGT50DDA120T3G
• Description: IGBT MOD TRENCH DL BST CHOP SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50DDA120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Dual Boost Chopper
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
80
60
40
20
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.3
0.1
ZCS
hard
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
ZVS
0.0001
30
I
C
(A)
40
50
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=18Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
60
www.microsemi.com
70
Single Pulse
Diode
0.01
APTGT50DDA120T3G
160
140
120
100
80
60
40
20
0
0
Forward Characteristic of diode
0.1
0.5
1
T
J
=125°C
V
1.5
F
(V)
1
2
T
J
=25°C
2.5
10
3
5 - 5