APTGT50DA120TG Microsemi Power Products Group, APTGT50DA120TG Datasheet - Page 4
APTGT50DA120TG
Manufacturer Part Number
APTGT50DA120TG
Description
IGBT 1200V 75A 277W SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50DA120TG.pdf
(5 pages)
Specifications of APTGT50DA120TG
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
277W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
100
100
12
10
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.00001
80
60
40
20
8
6
4
2
0
0
0
0
0
0
5
V
V
I
T
C
CE
GE
J
= 50A
= 125°C
0.9
0.5
0.3
0.1
0.05
0.7
Output Characteristics (V
= 600V
10
=15V
T
0.5
J
6
=125°C
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
30
0.0001
1.5
V
8
V
T
CE
GE
40
J
=25°C
(V)
T
(V)
J
2
=25°C
9
50
2.5
10
GE
60
T
T
=15V)
J
J
rectangular Pulse Duration (Seconds)
0.001
=125°C
=125°C
Eon
Eoff
Er
11
3
70
Single Pulse
3.5
80
12
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IGBT
0.01
120
100
100
12
10
80
60
40
20
80
60
40
20
8
6
4
2
0
0
0
APTGT50DA120TG
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
J
GE
0.1
= 125°C
G
=125°C
= 18Ω
T
=18Ω
= 600V
= 15V
J
=15V
300
= 125°C
20
1
Eoff
Output Characteristics
600
40
I
V
C
V
GE
V
CE
(A)
=17V
CE
2
1
(V)
900
(V)
60
V
GE
1200
3
=15V
80
V
V
GE
Eon
GE
Eon
=13V
=9V
Er
1500
10
100
4
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