APTGV75H60T3G Microsemi Power Products Group, APTGV75H60T3G Datasheet - Page 7

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APTGV75H60T3G

Manufacturer Part Number
APTGV75H60T3G
Description
IGBT NPT BST CHOP FULL BRDG SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV75H60T3G

Igbt Type
NPT, Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
7. Bottom switches curves
7.1 Bottom fast NPT IGBT typical performance curves
200
150
100
240
180
120
50
60
0
8
7
6
5
4
3
2
1
0
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
0
10
4
T
J
=125°C
25
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
= 25°C
12
6
50
T
J
=-55°C
GE
7
T
75
J
=15V)
3
=-55°C
T
T
J
14
=25°C
8
J
=125°C
Ic=120A
Ic=30A
Ic=60A
100 125
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9
10
16
4
200
150
100
120
100
18
16
14
12
10
3.5
2.5
1.5
0.5
50
80
60
40
20
8
6
4
2
0
0
4
3
2
1
0
0
-50
-25
0
APTGV75H60T3G
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
Ic=120A
Ic=60A
250µs Pulse Test
< 0.5% Duty cycle
I
T
Ic=30A
V
C
J
Output Characteristics (V
CE
= 30A
-25
= 25°C
T
40
0
, Collector to Emitter Voltage (V)
J
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
1
25
0
80
Gate Charge (nC)
V
Gate Charge
CE
T
J
=300V
=25°C
25
50
V
120
CE
2
250µs Pulse Test
< 0.5% Duty cycle
V
=120V
50
75
GE
= 15V
160
100
75
GE
T
T
J
J
=125°C
=10V)
=-55°C
3
V
CE
100
200
125
=480V
125
150
240
4
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