APTGT150DU60TG Microsemi Power Products Group, APTGT150DU60TG Datasheet - Page 4

• Manufacturer Part Number: APTGT150DU60TG
• Description: IGBT MOD TRENCH DUAL SOURCE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150DU60TG

• Igbt Type: Trench and Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 150A
• Current - Collector (ic) (max): 225A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 9.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
12
10
Switching Energy Losses vs Gate Resistance
50
50
8
6
4
2
0
0.35
0.25
0.15
0.05
0
0
0.3
0.2
0.1
0.00001
0
0
5
0
V
V
I
T
C
CE
G E
J
= 150A
= 150°C
Output Characteristics (V
= 300V
=15V
T
0.9
0.7
0.5
0.3
0.1
0.5
J
6
=150°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
Transfert Characteristics
5
Gate Resistance (ohms)
T
Eon
T
J
=125°C
J
7
=125°C
T
1
Eoff
J
=25°C
10
0.0001
V
8
V
T
CE
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
T
9
15
J
Eon
=25°C
2
10
GE
Er
T
J
=15V)
20
=150°C
2.5
Rectangular Pulse Duration in Seconds
0.001
11
Eoff
www.microsemi.com
25
12
3
Single Pulse
IGBT
0.01
350
300
250
200
150
100
300
250
200
150
100
10
50
APTGT150DU60TG
50
8
6
4
2
0
0
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
T
CE
G E
J
G
J
GE
G
= 150°C
J
=150°C
= 3.3Ω
100
=3.3Ω
0.1
0.5
= 300V
= 15V
= 150°C
=15V
50
200
1
Output Characteristics
100
300
1.5
V
I
G E
C
V
150
V
(A)
=19V
CE
CE
400
(V)
1
(V)
2
V
200
GE
500
2.5
=15V
Eoff
V
GE
V
250
=13V
GE
600
3
=9V
Eon
Er
10
300
700
3.5
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