APTGF75DSK120TG Microsemi Power Products Group, APTGF75DSK120TG Datasheet - Page 4

• Manufacturer Part Number: APTGF75DSK120TG
• Description: IGBT MODULE NPT BUCK CHOP SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF75DSK120TG

• Igbt Type: NPT
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.1nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF75DSK120TGMP

Typical Performance Curve
150
125
100
150
125
100
35
30
25
20
15
10
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 75A
0.7
0.5
0.9
0.3
Output Characteristics (V
= 125°C
0.05
0.1
10
= 600V
=15V
6
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
7
2
0.0001
30
V
8
T
V
J
T
CE
GE
=125°C
J
Eon
3
=25°C
Eoff
(V)
(V)
40
T
9
J
=125°C
T
J
=25°C
4
50
10
GE
=15V)
rectangular Pulse Duration (Seconds)
0.001
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60
5
11
70
12
6
Single Pulse
0.01
IGBT
APTGF75DSK120TG
175
150
125
100
28
24
20
16
12
150
125
100
75
50
25
8
4
0
75
50
25
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
GE
J
G
J
= 125°C
=125°C
= 7.5 Ω
=7.5 Ω
0.1
= 125°C
= 600V
= 15V
=15V
25
300
1
Output Characteristics
50
2
600
I
C
V
75
(A)
CE
V
V
GE
CE
3
(V)
1
=20V
900
(V)
100
4
Eon
1200
125
V
V
V
GE
GE
5
GE
Eoff
=15V
=9V
=12V
1500
150
10
6
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