APTGT100DH120TG Microsemi Power Products Group, APTGT100DH120TG Datasheet - Page 5

• Manufacturer Part Number: APTGT100DH120TG
• Description: IGBT MOD TRENCH ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100DH120TG

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.35
0.25
0.15
0.05
60
50
40
30
20
10
0
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
0.9
0.05
0.7
0.5
ZCS
20
0.1
0.3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
ZVS
0.0001
60
I
C
(A)
80
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
100
=3.9 Ω
=600V
120
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
140
Single Pulse
0.01
APTGT100DH120TG
300
250
200
150
100
50
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5