APTGT75H120TG Microsemi Power Products Group, APTGT75H120TG Datasheet - Page 4

• Manufacturer Part Number: APTGT75H120TG
• Description: IGBT MOD TRENCH FULL BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT75H120TG

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 357W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
125
100
16
14
12
10
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 75A
= 125°C
Output Characteristics (V
= 600V
=15V
4
0.1
T
0.9
0.3
0.7
0.5
0.05
J
6
=125°C
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
8
1
T
7
J
=25°C
12
0.0001
8
V
V
CE
GE
16
2
(V)
T
(V)
J
=25°C
9
20
T
10
GE
J
24
=125°C
T
3
Eon
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
11
28
Eoff
Er
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Single Pulse
32
12
4
IGBT
0.01
175
150
125
100
150
125
100
16
14
12
10
75
50
25
75
50
25
8
6
4
2
0
0
0
0
0
APTGT75H120TG
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
J
Reverse Bias Safe Operating Area
CE
GE
G
J
T
= 125°C
GE
G
0.1
=125°C
= 4.7Ω
=4.7Ω
J
= 600V
= 15V
=15V
25
= 125°C
400
1
Output Characteristics
50
Eoff
I
C
V
V
800
V
75
CE
(A)
GE
CE
2
=17V
(V)
1
(V)
100
1200
3
Eon
V
V
V
125
GE
GE
GE
=15V
=13V
=9V
Er
1600
10
150
4
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