APTGF150A120TG Microsemi Power Products Group, APTGF150A120TG Datasheet - Page 5

• Manufacturer Part Number: APTGF150A120TG
• Description: POWER MODULE IGBT 1200V 150A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150A120TG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.2nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF150A120TGMI; APTGF150A120TGMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
90
80
70
60
50
40
30
20
10
0.35
0.25
0.15
0.05
0.3
0.2
0.1
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
hard
0.7
0.5
0.1
0.3
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
80
0.0001
I
ZVS
C
(A)
120
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=5.6 Ω
160
=600V
0.001
rectangular Pulse Duration (Seconds)
200
www.microsemi.com
Single Pulse
Diode
0.01
250
200
150
100
50
0
0
APTGF150A120TG
0.1
Forward Characteristic of diode
0.5
1
T
J
V
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5