APTGT300SK60G Microsemi Power Products Group, APTGT300SK60G Datasheet - Page 5

• Manufacturer Part Number: APTGT300SK60G
• Description: IGBT 600V 430A 1150W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300SK60G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 300A
• Current - Collector (ic) (max): 430A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 24nF @ 25V
• Power - Max: 1150W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
120
100
0.2
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
0.5
ZCS
0.3
0.9
0.1
0.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
0.05
Hard
100
ZVS
200
0.0001
I
C
(A)
300
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=1.8Ω
400
=300V
Rectangular Pulse Duration in Seconds
0.001
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Single Pulse
500
Diode
0.01
600
500
400
300
200
100
0
APTGT300SK60G
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
J
=125°C
0.8
V
F
1
(V)
1.2
T
1.6
J
=25°C
10
2
5 - 5