APTGT400SK60D3G Microsemi Power Products Group, APTGT400SK60D3G Datasheet - Page 4

• Manufacturer Part Number: APTGT400SK60D3G
• Description: IGBT 600V 500A 1250W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400SK60D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 400A
• Current - Collector (ic) (max): 500A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 24nF @ 25V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
800
600
400
200
35
30
25
20
15
10
Switching Energy Losses vs Gate Resistance
600
500
400
300
200
100
5
0
0.14
0.12
0.08
0.06
0.04
0.02
0
0.1
0
0.00001
0
5
0
V
V
I
T
C
0
CE
GE
J
= 400A
= 150°C
Output Characteristics (V
= 300V
=15V
0.9
0.7
0.5
0.3
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
Transfert Characteristics
6
T
Gate Resistance (ohms)
0.5
2.5
J
=150°C
Eoff
7
0.0001
1
V
V
GE
CE
5
8
(V)
(V)
T
J
1.5
=25°C
T
J
=25°C
9
7.5
GE
Eon
=15V)
T
J
2
Err
=150°C
10
Rectangular Pulse Duration in Seconds
0.001
2.5
10
11
Single Pulse
www.microsemi.com
IGBT
0.01
APTGT400SK60D3G
1000
35
30
25
20
15
10
800
600
400
200
5
0
600
500
400
300
200
100
0
0
0
0
0
V
V
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
V
T
R
= 150°C
T
= 1.5Ω
GE
J
0.1
G
= 300V
= 15V
=150°C
100 200 300 400 500 600 700
J
=1.5Ω
0.5
=15V
= 150°C
200
Output Characteristics
1
I
1.5
C
400
V
V
(A)
CE
CE
1
(V)
(V)
V
2
GE
=15V
2.5
600
Eoff
V
GE
V
GE
=13V
Eon
3
Err
=9V
10
800
3.5
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