APTGT150DA170G Microsemi Power Products Group, APTGT150DA170G Datasheet - Page 5
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APTGT150DA170G
Manufacturer Part Number
APTGT150DA170G
Description
IGBT 1700V 250A 890W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150DA170G.pdf
(5 pages)
Specifications of APTGT150DA170G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 150A
Current - Collector (ic) (max)
250A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
13.5nF @ 25V
Power - Max
890W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
20
15
10
5
0
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
hard
0.7
0.5
0.1
0.3
40
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
80
0.0001
I
C
120
(A)
160
V
D=50%
R
T
T
CE
G
J
C
=125°C
=4.7Ω
=75°C
=900V
200
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
240
www.microsemi.com
0.01
Diode
300
250
200
150
100
50
0
APTGT150DA170G
0
T
Forward Characteristic of diode
0.1
J
=125°C
0.5
1
V
T
F
1.5
J
(V)
=25°C
1
2
T
J
=125°C
2.5
10
3
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