APTGT100TA60PG Microsemi Power Products Group, APTGT100TA60PG Datasheet - Page 5

• Manufacturer Part Number: APTGT100TA60PG
• Description: IGBT MODULE TRPL PHASE LEG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100TA60PG

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
switching
0.05
ZCS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
25
50
0.0001
ZVS
I
C
75
(A)
100
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=3.3Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
125
Single Pulse
150
www.microsemi.com
0.01
200
175
150
125
100
75
50
25
APTGT100TA60PG
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
Diode
=25°C
1.6
2
10
2.4
5 - 5