APTGT100TDU60PG Microsemi Power Products Group, APTGT100TDU60PG Datasheet - Page 4
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APTGT100TDU60PG
Manufacturer Part Number
APTGT100TDU60PG
Description
IGBT MODULE TRIPLE DUAL SRC SP6P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT100TDU60PG.pdf
(5 pages)
Specifications of APTGT100TDU60PG
Igbt Type
Trench and Field Stop
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
200
175
150
125
100
200
175
150
125
100
8
6
4
2
0
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.00001
0
0
0
0
V
V
I
T
0
C
5
CE
GE
J
= 100A
= 150°C
0.9
= 300V
0.5
=15V
0.7
0.3
0.1
Output Characteristics (V
0.05
T
5
0.5
J
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
=150°C
Transfert Characteristics
Gate Resistance (ohms)
Eon
T
T
J
J
=125°C
7
10
=125°C
T
1
J
0.0001
=25°C
V
8
V
T
CE
15
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
Eoff
T
9
J
=25°C
20
2
10
Eon
GE
T
J
=15V)
=150°C
Rectangular Pulse Duration in Seconds
0.001
2.5
Er
25
11
Single Pulse
30
3
12
www.microsemi.com
IGBT
0.01
APTGT100TDU60PG
250
200
150
100
200
175
150
125
100
7
6
5
4
3
2
1
0
50
75
50
25
0
0
0
0
0
V
V
R
T
J
CE
GE
G
V
T
R
T
= 150°C
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
25
= 3.3Ω
J
GE
G
J
= 300V
= 15V
0.1
=150°C
100
=3.3Ω
= 150°C
0.5
=15V
50
200
Output Characteristics
1
75
300 400 500 600 700
V
1.5
I
C
GE
100 125 150 175 200
V
V
(A)
=19V
CE
CE
1
(V)
(V)
2
V
GE
2.5
=15V
Eoff
V
GE
V
=13V
GE
3
=9V
Eon
Er
10
3.5
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